Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.

本文言語English
ページ79-80
ページ数2
出版ステータスPublished - 1998 12 1
外部発表はい
イベントProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
継続期間: 1998 10 51998 10 8

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period98/10/598/10/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント 「Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル