抄録
The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.
| 本文言語 | English |
|---|---|
| ページ | 79-80 |
| ページ数 | 2 |
| 出版ステータス | Published - 1998 12月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA 継続期間: 1998 10月 5 → 1998 10月 8 |
Other
| Other | Proceedings of the 1998 IEEE International SOI Conference |
|---|---|
| City | Stuart, FL, USA |
| Period | 98/10/5 → 98/10/8 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学