Interfacial phase change memory devices based on chalcogenide superlattices show a remarkable performance improvement over traditional phase change memory devices. Here, we report on the effects of the resistive switching of Ge-Te/Sb-Te superlattices in the presence of an external magnetic field at elevated temperature. In addition to the unique thermal dependence of the switching behavior, a new resistance level was found. This resistance level, once initiated, could be then obtained without a magnetic field. The observed phenomena are associated with the structural reconfiguration of domains at the superlattice interfaces and grain boundaries. It has been proposed that these effects may be caused by the localization of spin-polarized electrons generated by a combination of electric and magnetic fields in the ferroelectric phase of the superlattice.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2020 5月 18|
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