Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli, Shi Yi, Gu Shulin, Zhu Jianmin, Zheng Youdou, Saito Kenichi, Ishikuro Hiroki, Hiramoto Toshiro

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

本文言語English
ページ(範囲)189-193
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
8
2
DOI
出版ステータスPublished - 2000 8
外部発表はい
イベントIUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials - Beijing, China
継続期間: 1999 6 131999 6 18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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