Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Conference article査読

37 被引用数 (Scopus)

抄録

We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

本文言語English
ページ(範囲)425-428
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
1 B
DOI
出版ステータスPublished - 1999 1 1
外部発表はい
イベントProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
継続期間: 1998 5 311998 6 4

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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