We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1999 1 1|
|イベント||Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan|
継続期間: 1998 5 31 → 1998 6 4
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