Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Nobuya Mori, Masashi Uematsu, Gennady Mil'Nikov, Hideki Minari, Kohei M. Itoh

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

本文言語English
ホスト出版物のタイトル2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
ページ119-122
ページ数4
DOI
出版ステータスPublished - 2013
イベント18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
継続期間: 2013 9 32013 9 5

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
国/地域United Kingdom
CityGlasgow
Period13/9/313/9/5

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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