Effects of plasma molding on feature profile of silicon micro-electro-mechanical systems through flux ion velocity distributions in two-frequency capacitively coupled plasma in SF6/O2

Fukutaro Hamaoka, Takashi Yagisawa, Toshiaki Makabe

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We numerically investigated large-scale Si etching of several hundreds of micrometers such as that used in micro-electromechanical systems (MEMS) fabrication. This was carried out in SF6 (83%)/O2 at 300mTorr in two-frequency capacitively coupled plasma using an extended VicAddress. We estimated the plasma molding's local characteristics including potential distribution and flux ion velocity distribution adjacent to an artificial microscale hole pattern. The sheath thickness is comparable to or even smaller than the size of the hole, and the sheath tends to wrap around the hole on a Si wafer. The distorted sheath field caused by the plasma molding directly affects the incident ion flux velocity distribution. The incident angle of SF5 + ions with a low energy strongly deviates from the normal surface at the hole's edge. The ion flux becomes radially nonuniform in the vicinity of the hole pattern, suppressing anisotropy of the etch profile. The feature profile of the Si hole indicates that the etching is enhanced particularly at the bottom corner and sidewall.

本文言語English
ページ(範囲)3059-3065
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
5 A
DOI
出版ステータスPublished - 2007 5 8

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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