Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka, Tadashi Takamasu, Giyu Kido, Yoshihiko Gotoh, Nobuyuki Koguchi, Masahiro Yoshita, Shinichi Watanabe, Hidefumi Akiyama

研究成果: Conference article査読

抄録

We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

本文言語English
ページ(範囲)J9.5.1-J9.5.6
ジャーナルMaterials Research Society Symposium - Proceedings
642
出版ステータスPublished - 2001
外部発表はい
イベントSemiconductor Quantum Dots II - Boston, MA, United States
継続期間: 2000 11 272000 11 30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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