The superlattice (SL) phase change materials, consisting of GeTe/Sb2Te3(GeTeSL) or SnTe/Sb2Te3 (SnTeSL), were demonstrated to achieve extremely low power RESET operation. The eight-layered SnTeSL consisting of Sn10Te90 showed 10-3 lower RESET power than Ge2Sb2Te5 (GST225) with the same film thickness. The electric and optical experimental results indicate that the mechanism of the low power switching is the RESET operation induced not by thermal energy but by the electric field, which can reduce the dynamic current. This hypothesis was supported by the first principle molecular dynamics. The singlelayered SnTeSL showed 10-4 RESET power, which is explained by the electric-field-induced switching.
|出版ステータス||Published - 2014|
|イベント||Symposium on Nonvolatile Memories 3 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico|
継続期間: 2014 10 5 → 2014 10 9
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