Electrical and thermal transport of layered bismuth-sulfide EuBiS2F at temperatures between 300 and 623 K

Yosuke Goto, Joe Kajitani, Yoshikazu Mizuguchi, Yoichi Kamihara, Masanori Matoba

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We demonstrate the electrical and thermal transport of the layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to that of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to the heavier atomic mass of Eu ions than that of Sr ions.

本文言語English
論文番号085003
ジャーナルJournal of the Physical Society of Japan
84
8
DOI
出版ステータスPublished - 2015 8 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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