Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, K. M. Itoh

研究成果: Article査読

38 被引用数 (Scopus)

抄録

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states α | ↑↓ 〉 +β | ↓↑ 〉 and -β | ↑↓ 〉 +α | ↓↑ 〉 were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and | ↑↑ 〉 or | ↓↓ 〉 states are observed clearly. A continuous change of α and β with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.

本文言語English
論文番号205206
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
80
20
DOI
出版ステータスPublished - 2009 11月 24

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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