Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon

W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, K. M. Itoh

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We report on the electrical detection of cross relaxation (EDCR) processes in phosphorus-doped γ-irradiated silicon, where the dipolar-coupled electron spins of phosphorus and oxygen-vacancy complex (Si-SL1 center) undergo spin flip-flop transitions at specific magnetic field values for which the Zeeman splitting of the two centers become equal. Such cross relaxation signals are observed as the change in the sample photoconductivity at theoretically predicted magnetic fields without application of resonance frequency. This EDCR is a very simple and sensitive method for detecting paramagnetic centers in semiconductors.

本文言語English
論文番号045204
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
84
4
DOI
出版ステータスPublished - 2011 7月 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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