Electrical properties of carbon nanotube bundles for future via interconnects

Mizuhisa Nihei, Akio Kawabata, Daiyu Kondo, Masahiro Horibe, Shintaro Sato, Yuji Awano

    研究成果: Article査読

    159 被引用数 (Scopus)


    We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 × 106 A/cm2, which is favorably compared with Cu vias.

    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    4 A
    出版ステータスPublished - 2005 4

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)


    「Electrical properties of carbon nanotube bundles for future via interconnects」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。