Electrical properties of Ga₂O₃:Sn/CIGS hetero-junction

Mathematics

• Absorption Coefficient 16%
• Avalanche 14%
• Band Gap 16%
• Cell 7%
• Dark Current 44%
• Depletion 29%
• Electrical Properties 84%
• Experimental Results 10%
• Heterojunction 95%
• High Efficiency 12%
• High Resolution 12%
• High Speed 12%
• Image Sensor 100%
• Imaging 11%
• Light Intensity 18%
• Multiplication 8%
• Oxides 14%
• Pixel 25%
• Quantum Efficiency 20%
• Semiconductors 24%
• Thin Films 39%
• Ultraviolet 15%
• Voltage 11%

Engineering & Materials Science

• Carrier concentration 29%
• Dark currents 31%
• Electric potential 5%
• Electric properties 55%
• Energy gap 11%
• Gallium 14%
• Image sensors 55%
• Imaging techniques 8%
• Oxides 8%
• Photoconducting materials 35%
• Pixels 15%
• Quantum efficiency 16%
• Semiconductor materials 18%
• Thin films 29%
• Tin 12%

Physics & Astronomy

• absorptivity 8%
• avalanches 10%
• cells 5%
• dark current 21%
• depletion 18%
• electric potential 5%
• electrical properties 38%
• gallium oxides 13%
• high resolution 6%
• high speed 7%
• luminous intensity 9%
• multiplication 10%
• n-type semiconductors 13%
• photoconductors 25%
• pixels 16%
• quantum efficiency 9%
• sensitivity 18%
• sensors 31%
• thin films 16%
• tin 9%
• ultraviolet radiation 10%