Electrical properties of photoconductor using Ga2O 3/CuGaSe2 heterojunction

Kenji Kikuchi, Shigeyuki Imura, Kazunori Miyakawa, Misao Kubota, Eiji Ohta

研究成果: Conference contribution

抄録

The feasibility of using a photoconductor with a Ga2O 3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga 2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

本文言語English
ホスト出版物のタイトルCompound Semiconductors
ホスト出版物のサブタイトルThin-Film Photovoltaics, LEDs, and Smart Energy Controls
ページ391-395
ページ数5
DOI
出版ステータスPublished - 2013
イベント2013 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2013 4月 12013 4月 5

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1538
ISSN(印刷版)0272-9172

Other

Other2013 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period13/4/113/4/5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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