Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

P. Fons, N. Hirashita, L. C. Markert, Y. W. Kim, J. E. Greene, W. X. Ni, J. Knall, G. V. Hansson, J. E. Sundgren

研究成果: Article査読

26 被引用数 (Scopus)

抄録

A low-energy ultrahigh-vacuum compatible ion gun with single-grid optics was used to provide accelerated Sb ion doping during the growth of Si(100) by molecular beam epitaxy (MBE). The incorporation probability of accelerated Sb in MBE Si films grown at 800 °C with an ion acceleration potential of 150 eV was near unity, more than four orders of magnitude higher than for thermal Sb. The films exhibited complete dopant substitutionality and temperature-dependent electron mobilities were equal to the best reported bulk Si values for Sb concentrations up to 2×1019 cm-3, more than an order of magnitude higher than obtainable by thermal Sb doping during Si MBE. Transmission electron microscopy examination of all films showed no evidence of dislocations or other extended defects.

本文言語English
ページ(範囲)1732-1734
ページ数3
ジャーナルApplied Physics Letters
53
18
DOI
出版ステータスPublished - 1988
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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