Electrical resistivity and Hall resistivity of thin films of amorphous Cr1-xMnxGe

T. Sato, K. Ikkatai, Eiji Ohta, M. Sakata

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The electrical resistivity rho and the Hall resistivity rho H of thin films of amorphous Cr1-xMnxGe(0<or=x<or=0.9) prepared by the flash-evaporation method are measured in the temperature ranges 4.2-320 and 77-270K, respectively. The temperature coefficient of the electrical resistivity is negative at temperatures between 4.2 and 320K for x>or=0.2 although minima and maxima in the electrical resistivity are observed for x=0 and 0.1. The low-temperature data on the relative electrical resistivity rho R(t) for x>or=0.3 satisfy the relation rho R(T)=A+B exp(-CT). The coefficient C shows a minimum at x approximately=0.5. The Hall resistivity increases monotonically with increasing Mn content. A possible explanation for the magnetic properties of amorphous Cr1-xMn xGe alloys is given on the basis of these transport measurements.

本文言語English
論文番号015
ページ(範囲)2087-2095
ページ数9
ジャーナルJournal of Physics F: Metal Physics
14
9
DOI
出版ステータスPublished - 1984

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 金属および合金

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