Electrical transport properties of graphene on SiO2 with specific surface structures

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, A. Toriumi

研究成果: Article査読

148 被引用数 (Scopus)

抄録

The mobility of graphene transferred on a SiO2/Si substrate is limited to ∼10 000 cm2V-1s-1. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electrical transport properties. Although surface structures on SiO2 such as silanol and siloxane groups are recognized, the relation between the surface treatment of SiO2 and graphene characteristics has not yet been elucidated. This paper discusses the electrical transport properties of graphene on specific surface structures of SiO2 prepared by O2-plasma treatments and reoxidization.

本文言語English
論文番号024513
ジャーナルJournal of Applied Physics
110
2
DOI
出版ステータスPublished - 2011 7月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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