Electrically induced conductivity switching in sputtered Fe 3O4 thin film

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

研究成果: Article査読

抄録

Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.

本文言語English
ページ(範囲)85-88
ページ数4
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
9
2
出版ステータスPublished - 2004 9 1
外部発表はい

ASJC Scopus subject areas

  • コンピュータ サイエンス(全般)
  • 電子工学および電気工学

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