Electrically tunable spin injector free from the impedance mismatch problem

K. Ando, S. Takahashi, J. Ieda, H. Kurebayashi, T. Trypiniotis, C. H.W. Barnes, S. Maekawa, E. Saitoh

研究成果: Article査読

223 被引用数 (Scopus)

抄録

Injection of spin currents into solids is crucial for exploring spin physics and spintronics. There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors and organic materials, which uses tunnel barriers to circumvent the impedance mismatch problem; the impedance mismatch between ferromagnetic metals and high-resistivity materials drastically limits the spin-injection efficiency. However, because of this problem, there is no route for spin injection into these materials through low-resistivity interfaces, that is, Ohmic contacts, even though this promises an easy and versatile pathway for spin injection without the need for growing high-quality tunnel barriers. Here we show experimental evidence that spin pumping enables spin injection free from this condition; room-temperature spin injection into GaAs from Ni 81 Fe 19 through an Ohmic contact is demonstrated through dynamical spin exchange. Furthermore, we demonstrate that this exchange can be controlled electrically by applying a bias voltage across a Ni 81 Fe 19/GaAs interface, enabling electric tuning of the spin-pumping efficiency.

本文言語English
ページ(範囲)655-659
ページ数5
ジャーナルNature Materials
10
9
DOI
出版ステータスPublished - 2011 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Electrically tunable spin injector free from the impedance mismatch problem」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル