Electrochemical properties of phosphorus doped diamond

Yu Mukuda, Takeshi Watanabe, Akihiko Ueda, Yoshiki Nishibayashi, Yasuaki Einaga

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The electrochemical properties of an n-type phosphorus doped diamond (PDD) electrode were investigated and compared with a p-type boron doped diamond (BDD) electrode. The Mott-Schottky plots in 0.1 M HClO4 are reported and related to the energy band diagram of electrochemically pretreated BDD and PDD. These results revealed that the band position of anodically pretreated PDD corresponded to the one of anodically pretreated BDD. Moreover, it was found the flat-band potential of the anodically pretreated PDD decreased by ca. 1 V after cathodically pretreatment. The cyclic voltammetries for Ru(NH3)63+/2+ showed that electrochemical behaviors of PDD and BDD were entirely different in possible direction for charge transfer across the electrode-electrolyte inaterface. In addition, less n-type diode-like behavior was observed at the cathodically pretreated PDD than the anodically pretreated PDD. These results point out the importance of the surface chemistry controlled by electrochemical pretreatments.

本文言語English
ページ(範囲)599-603
ページ数5
ジャーナルElectrochimica Acta
179
DOI
出版ステータスPublished - 2015 10月 10

ASJC Scopus subject areas

  • 化学工学(全般)
  • 電気化学

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