Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects

Yuji Awano, Makoto Kosugi, Shigeru Kuroda, Takashi Mimura, Masayuki Abe

研究成果: Paper

8 引用 (Scopus)

抜粋

The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

元の言語English
ページ46-55
ページ数10
出版物ステータスPublished - 1989 12 1
外部発表Yes
イベントProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
継続期間: 1989 8 71989 8 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Ithaca, NY, USA
期間89/8/789/8/9

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Awano, Y., Kosugi, M., Kuroda, S., Mimura, T., & Abe, M. (1989). Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. 46-55. 論文発表場所 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .