Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 1018 × cm-3 and silicon-on-insulator thickness of less than 10 nm

Naotoshi Kadotani, Tsunaki Takahashi, Teruyuki Ohashi, Shunri Oda, Ken Uchida

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    Electron mobility in nanoscale silicon-on-insulator (SOI) layers with a doping concentration ranging from 2 × 1017 cm-3 to 1 × 1019 cm-3 is thoroughly studied. We observe that electron mobility in highly doped nanoscale extremely thin SOI (ETSOI) layers with thicknesses ranging from 5 to 11 nm is greater than electron mobility in bulk Si with the same doping concentration. Since no dopant ion exists in the oxides above and below ETSOI, the absence of ions close to the ETSOI layers effectively reduces the number of Coulomb centers that scatter carriers in the ETSOI layers. We show that the ratio of SOI thickness to the average distance between donor ions is critically important to understand the mobility enhancement in nanoscale ETSOI. It is demonstrated that mobility enhancement can be universally described as a function of the ratio described above. The findings of our study are indispensable in designing aggressively scaled SOI metal-oxide-semiconductor field-effect transistors.

    本文言語English
    論文番号034502
    ジャーナルJournal of Applied Physics
    110
    3
    DOI
    出版ステータスPublished - 2011 8 1

    ASJC Scopus subject areas

    • 物理学および天文学(全般)

    フィンガープリント

    「Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 10<sup>18</sup> × cm<sup>-3</sup> and silicon-on-insulator thickness of less than 10 nm」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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