Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka; A. R. Stegner; A. M. Tyryshkin; S. Shankar; M. L.W. Thewalt; S. A. Lyon; K. M. Itoh; M. S. Brandt

doi:10.1103/PhysRevB.81.161203

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

物理情報工学科

研究成果: Article › 査読

25 被引用数 (Scopus)

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The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

本文言語	English
論文番号	161203
ジャーナル	Physical Review B - Condensed Matter and Materials Physics
巻	81
号	16
DOI	https://doi.org/10.1103/PhysRevB.81.161203
出版ステータス	Published - 2010 4月 19

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1103/PhysRevB.81.161203

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T1 - Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

AU - Tezuka, H.

AU - Stegner, A. R.

AU - Tyryshkin, A. M.

AU - Shankar, S.

AU - Thewalt, M. L.W.

AU - Lyon, S. A.

AU - Itoh, K. M.

AU - Brandt, M. S.

PY - 2010/4/19

Y1 - 2010/4/19

N2 - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

AB - The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

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JO - Physical Review B-Condensed Matter

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Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

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