Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

研究成果: Article

22 引用 (Scopus)

抜粋

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

元の言語English
記事番号161203
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
発行部数16
DOI
出版物ステータスPublished - 2010 4 19

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Tezuka, H., Stegner, A. R., Tyryshkin, A. M., Shankar, S., Thewalt, M. L. W., Lyon, S. A., Itoh, K. M., & Brandt, M. S. (2010). Electron paramagnetic resonance of boron acceptors in isotopically purified silicon. Physical Review B - Condensed Matter and Materials Physics, 81(16), [161203]. https://doi.org/10.1103/PhysRevB.81.161203