The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2010 4月 19|
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