Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L.W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

研究成果: Article査読

24 被引用数 (Scopus)

抄録

The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified S 28 i single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction in the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results.

本文言語English
論文番号161203
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
81
16
DOI
出版ステータスPublished - 2010 4月 19

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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