Electron spin coherence exceeding seconds in high-purity silicon

Alexei M. Tyryshkin, Shinichi Tojo, John J.L. Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans Joachim Pohl, Thomas Schenkel, Michael L.W. Thewalt, Kohei M. Itoh, S. A. Lyon

研究成果: Article査読

439 被引用数 (Scopus)

抄録

Silicon is one of the most promising semiconductor materials for spin-based information processing devices. Its advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of a 28Si form with no magnetic nuclei overcomes a primary source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than that achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in pure 28Si material (residual 29Si concentration <50 ppm) with donor densities of 1014-1015 cm3. We elucidate three mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime T2 up to 2 s. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ∼200 nm. A magnetic field gradient suppresses such interactions, producing an extrapolated electron spin T2 of 10 s at 1.8 K. These coherence lifetimes are without peer in the solid state and comparable to high-vacuum qubits, making electron spins of donors in silicon ideal components of quantum computers, or quantum memories for systems such as superconducting qubits.

本文言語English
ページ(範囲)143-147
ページ数5
ジャーナルNature Materials
11
2
DOI
出版ステータスPublished - 2012 2

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Electron spin coherence exceeding seconds in high-purity silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル