Electron transport coefficients in SiH4 and Si2H6 in dc and rf fields

T. Shimada, Y. Nakamura, Z. Lj Petrović, T. Makabe

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We have calculated data for electron transport in SiH4 and Si2H6 which may serve as the basis for modelling physical and chemical processes in radio frequency (rf) plasmas. A direct numerical procedure was used to solve the Boltzmann equation and to obtain exact transport coefficients. It was shown that the cross section set that was adopted gives good agreement with the available experimental transport coefficients. Furthermore, we have calculated the features of the transport coefficients in rf fields. In both gases we observe good examples of anomalous longitudinal diffusion, time-dependent negative differential conductivity and complex temporal relaxation of momentum and energy. The behaviour of the transport coefficients may be correlated with the temporal development of the components of the velocity distribution function.

本文言語English
ページ(範囲)1936-1946
ページ数11
ジャーナルJournal of Physics D: Applied Physics
36
16
DOI
出版ステータスPublished - 2003 8月 21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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