Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation

Jun Matsui, Mari Shibata, Nobuhiko Nakano, Toshiaki Makabe

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.

本文言語English
ページ(範囲)294-299
ページ数6
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
16
1
DOI
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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