Electronic properties of silicon - M binary clusters (M = C & Na)

A. Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata, K. Kaya

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

Through photoelectron spectroscopic or photoionization, electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization were investigated. The ionization energies (Ei) of the SinNam clusters were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. Results of ab initio calculation show that the Na atom is bound by two Si atoms at n=4-6, whereas it is bound by one Si atom at n=7.

本文言語English
ページ(範囲)61-66
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
358
出版ステータスPublished - 1995 1 1
外部発表はい
イベントProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
継続期間: 1994 11 281994 11 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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