Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Kazuo Shiiki, Masaaki Igarashi, Hideo Kaijyu

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (∼6.6eV). It is found that Al2O3 thin film is not a good insulator.

本文言語English
ページ(範囲)5185-5186
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
8
DOI
出版ステータスPublished - 2003 8月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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