Electronic structure of octane on Cu(1 1 1) and Ni(1 1 1) studied by near edge X-ray absorption fine structure

Manabu Kiguchi, Shiro Entani, Susumu Ikeda, Genki Yoshikawa, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The electronic structure of an octane film grown on Cu(1 1 1) and Ni(1 1 1) was studied using C K-edge near edge X-ray absorption fine structure (NEXAFS). A pre-peak was observed on the bulk edge onset for the 1 ML thick octane films on the metal substrates. The pre-peak originated from metal induced gap states (MIGS) in the band gap of octane. The intensity of the pre-peak for octane/Ni(1 1 1) was the same as that of octane/Cu(1 1 1), suggesting that there was little difference in the density of unoccupied MIGS between the octane film on Ni(1 1 1) and Cu(1 1 1). We discuss the metal dependence of the density of unoccupied MIGS on the band structure of the metals.

本文言語English
ページ(範囲)4074-4077
ページ数4
ジャーナルSurface Science
601
18
DOI
出版ステータスPublished - 2007 9 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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