Electronic structure of Si1−yCyand Si1−x−yGexCyalloys with low C concentrations

M. Ohfuti, Y. Sugiyama, Y. Awano, N. Yokoyama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Relaxed Si1−yCyand Si-lattice-matched Si1−x−yGexCyalloys with low C concentrations of 1.6% and 3.1% have been studied from first principles. The bottom of the conduction bands in relaxed Si1−yCylies on the line Δ, as it does in Si. The band gap is linearly dependent on the C concentration and the reduction is as little as −0.9y eV On the other hand, Si-lattice-matched Si1−x−yGexCyhas a direct gap and the band gap is reduced by−3.9y eV from that in relaxed Si1−x−yGexThe free energy of Si1−x−yGexCyshows that the atoms are arranged at random, however, this arrangement does not affect the result for the band gap in the alloy.

本文言語English
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
63
19
DOI
出版ステータスPublished - 2001 4 10
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Electronic structure of Si<sub>1−y</sub>C<sub>y</sub>and Si<sub>1−x−y</sub>Ge<sub>x</sub>C<sub>y</sub>alloys with low C concentrations」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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