Electronic transport properties of Si thin film from bulk to sub-nm thickness: A first-principles study

研究成果: Conference contribution

抄録

To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.

本文言語English
ホスト出版物のタイトルPHYSICS OF SEMICONDUCTORS
ホスト出版物のサブタイトル27th International Conference on the Physics of Semiconductors, ICPS-27
ページ83-84
ページ数2
DOI
出版ステータスPublished - 2005 6 30
イベントPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
継続期間: 2004 7 262004 7 30

出版物シリーズ

名前AIP Conference Proceedings
772
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
国/地域United States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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