TY - GEN
T1 - Electronic transport properties of Si thin film from bulk to sub-nm thickness
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
AU - Yamauchi, Jun
PY - 2005/6/30
Y1 - 2005/6/30
N2 - To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.
AB - To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk around 30nm thickness and deviate from the naive effective mass approximation theory in the range thinner than 2nm. The effective mass of the 〈 001 〉 confined model is almost constant and equals to the bulk one throughout the calculated range(0.7-35nm). However, the mass of the 〈 111 〉 confined model strongly depends on the layer thickness.
UR - http://www.scopus.com/inward/record.url?scp=33749491580&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749491580&partnerID=8YFLogxK
U2 - 10.1063/1.1994005
DO - 10.1063/1.1994005
M3 - Conference contribution
AN - SCOPUS:33749491580
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 83
EP - 84
BT - PHYSICS OF SEMICONDUCTORS
Y2 - 26 July 2004 through 30 July 2004
ER -