Electronic transport properties of strained Si thin films: Effective mass anomalies

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The effect of strain and layer thickness on the transport properties of < 100 >, < 111 >, and < 110 > confined Si thin films is systematically investigated using the density functional calculation. The strain is uniformly applied to the plane perpendicular to the confined direction and the lattice along the direction is relaxed. Anomalously heavy effective mass, which is more than ten times of the strain-free bulk value, is found in the case of the < 111 > confinement with relatively large strain. Similar results are obtained for the < 110 > case. These heavy masses are attributed to the bulk property, where the two electron pockets, whose center is located about 0.84 Γ-X in the non-strained case, merge into one pocket under the relatively large strain.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ1405-1406
ページ数2
DOI
出版ステータスPublished - 2007 12 1
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7 242006 7 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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