Electronic transport properties of thin, channel regions from SOI through GOI: A first-principles study

研究成果: Article査読

14 被引用数 (Scopus)

抄録

To investigate transport properties of the channel region in silicon on insulator (SOI) and germanium on insulator (GOI), we studied the electronic structure of hydrogen-terminated Si(100), (111) and (110), and Ge(100) and (111) slab models by the density functional theory. It is found that the electronic properties around 30 nm thickness are almost the same for those of the bulk and they deviate from the naive effective mass approximation theory in the range thinner than 4 and 10 nm for Si and Ge, respectively. The effective masses in the Si <001 > and Ge < 111 > confined models are almost constant and equal to the bulk ones throughout the calculated range. However, the masses of the other models strongly depend on layer thickness. These behaviors are related to the off-diagonal terms in the effective mass tensors. In the Ge < 100 > model, we found that the confinement causes the exchange of the conduction band bottom between the Γ and the Brillouin zone boundary, which may cause the enhancement of the electron mobility.

本文言語English
ページ(範囲)342-345
ページ数4
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータスPublished - 2006 6 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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