Energy levels and degeneracy ratios for chromium in silicon

Takemitsu Kunio, Tomoki Nishino, Eiji Ohta, Makoto Sakata

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The energy levels and the degeneracy ratios for chromium in silicon have been determined by the Hall coefficients which were measured by the van der Pauw method. Using the curve fitting method for carrier concentration based on the charge balance equation with the root mean square deviation, the analysis shows that chromium in silicon gives rise to two donor levels. The energy levels of the upper and lower donors are located at Ec-0.226(±0.010)eV and Ev+0.128(±0.005)eV, and their degeneracy ratios are 1 3 and 1 4, respectivel.

本文言語English
ページ(範囲)1087-1091
ページ数5
ジャーナルSolid State Electronics
24
12
DOI
出版ステータスPublished - 1981 12
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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