The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.
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