Energy levels and degeneracy ratios for magnesium in n-type silicon

Eiji Ohta, Makoto Sakata

研究成果: Article

19 引用 (Scopus)

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The energy levels and degeneracy ratios of magnesium in n-type silicon have been determined by Hall effect measurements with the least square method. Magnesium ions appear to occupy two different sites and show different electrical properties. The first is amphoteric and exhibits an acceptor level at Ec - 0.115 eV (±0.002 eV), degeneracy ratio γI- = 2.5 as well as a donor level at Ec - 0.40 eV (±0.01 eV), γIII+ = 1. The second exhibits a donor level at Ec - 0.227 eV (±0.004 eV), degeneracy ratio γII+ = 1 2.5. The physical nature of these Mg associated site is unknown.

元の言語English
ページ(範囲)677-682
ページ数6
ジャーナルSolid State Electronics
22
発行部数7
DOI
出版物ステータスPublished - 1979 7
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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