A point contact metal oxide semiconductor field effect transistor (MOSFET) is used as a single quantum dot transistor fabricated on a silicon on insulator (SOI) substrate using the anisotropic etching technique. The energy spectrum of the quantum dot is extracted in Si single electron transistor from the gate voltage and drain voltage dependence of the drain current. The negative differential conductance (NDC) is observed in Si single electron transistor. Accurate understanding of the electronic states in the dot is important for the design of extremely small single electron devices for the room temperature operation.
|出版物ステータス||Published - 1997 1 1|
|イベント||Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA|
継続期間: 1997 6 23 → 1997 6 25
|Other||Proceedings of the 1997 55th Annual Device Research Conference|
|市||Fort Collins, CO, USA|
|期間||97/6/23 → 97/6/25|
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