Energy spectrum of the quantum-dot in a Si single-electron device

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Paper

3 引用 (Scopus)

抜粋

A point contact metal oxide semiconductor field effect transistor (MOSFET) is used as a single quantum dot transistor fabricated on a silicon on insulator (SOI) substrate using the anisotropic etching technique. The energy spectrum of the quantum dot is extracted in Si single electron transistor from the gate voltage and drain voltage dependence of the drain current. The negative differential conductance (NDC) is observed in Si single electron transistor. Accurate understanding of the electronic states in the dot is important for the design of extremely small single electron devices for the room temperature operation.

元の言語English
ページ84-85
ページ数2
出版物ステータスPublished - 1997 1 1
外部発表Yes
イベントProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
継続期間: 1997 6 231997 6 25

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
Fort Collins, CO, USA
期間97/6/2397/6/25

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Ishikuro, H., & Hiramoto, T. (1997). Energy spectrum of the quantum-dot in a Si single-electron device. 84-85. 論文発表場所 Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, .