Enhanced hole drift velocity in sub-0.1μm Si devices caused by anisotropic velocity overshoot

Yukio Tagawa, Yuji Awano

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 μm Si devices. We found from this simulation of 0.05 μm channel p-i-p diodes that the hole drift velocity in the channel with the orientation of with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in direction at room temperature. These results suggest that the current drive capability of sub-0.1 μm pMOSFETs could be optimized by choosing the channel orientation in the direction.

本文言語English
ホスト出版物のタイトルExtended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
出版社Institute of Electrical and Electronics Engineers Inc.
ページ206-209
ページ数4
1998-October
ISBN(電子版)0780343697, 9780780343696
DOI
出版ステータスPublished - 1998 1 1
外部発表はい
イベント6th International Workshop on Computational Electronics, IWCE 1998 - Osaka, Japan
継続期間: 1998 10 191998 10 21

Other

Other6th International Workshop on Computational Electronics, IWCE 1998
CountryJapan
CityOsaka
Period98/10/1998/10/21

ASJC Scopus subject areas

  • Modelling and Simulation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics

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