Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We present experimental and simulation results of Si self-diffusion and B diffusion in SiO2 formed directly on Si substrates by thermal oxidation. We show that both Si and B diffusion in SiO2 are enhanced by SiO generated at the Si/SiO2 interface and diffusing into SiO2. We also show that the existence of high-concentration B in SiO2 enhances SiO diffusion, which enhances both Si self-diffusion and B diffusion. This correlated diffusion of Si and B in SiO2 is consistent with the first-principles calculation results, which show that B diffuses via a complex of BSiO with frequent bond exchanges in the SiO2 network. Furthermore, based on the results, the enhancement of Si self-diffusion and B diffusion in SiO2 by compressive strain and their retardation by tensile strain are suggested.

本文言語English
ページ(範囲)270-275
ページ数6
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータスPublished - 2006 6 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント 「Enhanced Si and B diffusion in semiconductor-grade SiO<sub>2</sub> and the effect of strain on diffusion」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル