Enhanced spin hall effect in semiconductor heterostructures with artificial potential

Eto M. Mikio, Tomohiro Yokoyama

研究成果: Article

3 引用 (Scopus)

抜粋

We theoretically investigate the extrinsic spin Hall effect (SHE) in semiconductor heterostructures, caused by scattering at an artificial potential created by an antidot, STM tip, etc. The potential is electrically tunable. First, we formulate the SHE in terms of phase shifts in the partial wave expansion for a two-dimensional electron gas. The effect is significantly enhanced by resonant scattering when the attractive potential is properly tuned. Second, we examine a three-terminal device including an antidot, which possibly produces a spin current with a polarization of more than 50%.

元の言語English
記事番号073710
ジャーナルJournal of the Physical Society of Japan
78
発行部数7
DOI
出版物ステータスPublished - 2009 7 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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