Enhanced spin hall effect in semiconductor heterostructures with artificial potential

Eto M. Mikio, Tomohiro Yokoyama

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We theoretically investigate the extrinsic spin Hall effect (SHE) in semiconductor heterostructures, caused by scattering at an artificial potential created by an antidot, STM tip, etc. The potential is electrically tunable. First, we formulate the SHE in terms of phase shifts in the partial wave expansion for a two-dimensional electron gas. The effect is significantly enhanced by resonant scattering when the attractive potential is properly tuned. Second, we examine a three-terminal device including an antidot, which possibly produces a spin current with a polarization of more than 50%.

本文言語English
論文番号073710
ジャーナルJournal of the Physical Society of Japan
78
7
DOI
出版ステータスPublished - 2009 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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