Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots

Gento Yamahata, Ken Uchida, Shunri Oda, Yoshishige Tsuchiya, Hiroshi Mizuta

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    We study single-electron tunneling characteristics of silicon serial triple quantum dots which consist of lithographically-defined double quantum dots interconnected with a naturally-formed and smaller quantum dot. By controlling the single-electron tunneling through the triple quantum dots electrostatically using multiple side gates, the charge stability diagrams are characterized experimentally and theoretically. Several charge quadruple points are observed where sequential tunneling throughout the triple quantum dots is enabled. In addition, enhancement of tunnel conductance is observed along the two-hold degeneracy boundaries across which two electrons exhibit quantum cellular automata (QCA) cotunneling processes.

    本文言語English
    ホスト出版物のタイトルESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
    出版社IEEE Computer Society
    ページ314-317
    ページ数4
    ISBN(印刷版)9781424423644
    DOI
    出版ステータスPublished - 2008
    イベントESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
    継続期間: 2008 9 152008 9 19

    出版物シリーズ

    名前ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

    Other

    OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
    国/地域United Kingdom
    CityEdinburgh, Scotland
    Period08/9/1508/9/19

    ASJC Scopus subject areas

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学

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