Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors

Ken Uchida, Kazuya Matsuzawa, Junji Koga, Shin Ichi Takagi, Akira Toriumi

    研究成果: Article査読

    42 被引用数 (Scopus)

    抄録

    Source-side hot-electron generation is experimentally demonstrated in Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs). An asymmetric n-type MOSFET having a CoSi2 layer in place of one of the n+ source/drain regions has been fabricated and intensively investigated. When the CoSi2 layer is used as the source, large gate current and negative-differential conductance (NDC) are simultaneously observed, whereas, when the n+ region is used as the source, both gate current and NDC are not observed. By comparing the device characteristics before and after the NDC observation, it is concluded that the gate current is due to hot electrons generated at the Schottky source side and the NDC is caused by trapped electrons in the oxide. These source-side hot electrons will open up the way to the realization of deca-nanoscaled high-speed devices.

    本文言語English
    ページ(範囲)3992-3994
    ページ数3
    ジャーナルApplied Physics Letters
    76
    26
    DOI
    出版ステータスPublished - 2000 6月 26

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

    フィンガープリント

    「Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル