抄録
Source-side hot-electron generation is experimentally demonstrated in Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs). An asymmetric n-type MOSFET having a CoSi2 layer in place of one of the n+ source/drain regions has been fabricated and intensively investigated. When the CoSi2 layer is used as the source, large gate current and negative-differential conductance (NDC) are simultaneously observed, whereas, when the n+ region is used as the source, both gate current and NDC are not observed. By comparing the device characteristics before and after the NDC observation, it is concluded that the gate current is due to hot electrons generated at the Schottky source side and the NDC is caused by trapped electrons in the oxide. These source-side hot electrons will open up the way to the realization of deca-nanoscaled high-speed devices.
本文言語 | English |
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ページ(範囲) | 3992-3994 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 76 |
号 | 26 |
DOI | |
出版ステータス | Published - 2000 6月 26 |
ASJC Scopus subject areas
- 物理学および天文学(その他)