抄録
Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 359-361 |
| ページ数 | 3 |
| ジャーナル | Thin Solid Films |
| 巻 | 517 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 2008 11 3 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry