Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well

M. Myronov, Y. Shiraki, T. Mouri, K. M. Itoh

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Over three times enhancement of room-temperature two-dimensional hole gas (2DHG) conductivity, up to 649.3 μS, by implementation of double-sides modulation doping with strained Ge quantum well (QW) of the same thickness was obtained. The improvement was achieved by successful increase of the 2DHG density due to modification of valence band profile of Ge QW. The obtained 2DHG conductivity exceeds the previously reported high mobility two-dimensional electron gas and 2DHG conductivities.

本文言語English
ページ(範囲)359-361
ページ数3
ジャーナルThin Solid Films
517
1
DOI
出版ステータスPublished - 2008 11 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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