Enhancement of sensor response in graphene gas sensors by gate-induced field

Takahisa Tanaka, Takamune Yokoyama, Ken Uchida

研究成果: Article

抄録

The effects of the gate-induced field on sensor response in functionalized graphene sensor have not been fully understood yet. In this letter, graphene sensors decorated with Pd nanoparticles were fabricated, and gate voltage dependences of drain current and sensor response to hydrogen were experimentally and numerically examined. The sensor response was enhanced in the gate-induced electron conduction regime, compared to that in hole conduction regime. By utilizing the non-equilibrium Green's function calculations, the origin of the response enhancement was modeled as asymmetric potentials for holes and electrons. We conclude that the sensor response of graphene can be enhanced using the gate-induced electric field in various types of graphene sensors.

元の言語English
記事番号8491313
ページ(範囲)1924-1927
ページ数4
ジャーナルIEEE Electron Device Letters
39
発行部数12
DOI
出版物ステータスPublished - 2018 12 1

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Graphite
Chemical sensors
Graphene
Sensors
Electrons
Drain current
Green's function
Hydrogen
Electric fields
Nanoparticles
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Enhancement of sensor response in graphene gas sensors by gate-induced field. / Tanaka, Takahisa; Yokoyama, Takamune; Uchida, Ken.

:: IEEE Electron Device Letters, 巻 39, 番号 12, 8491313, 01.12.2018, p. 1924-1927.

研究成果: Article

Tanaka, Takahisa ; Yokoyama, Takamune ; Uchida, Ken. / Enhancement of sensor response in graphene gas sensors by gate-induced field. :: IEEE Electron Device Letters. 2018 ; 巻 39, 番号 12. pp. 1924-1927.
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