Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Yoshikazu Mizuguchi; Atsushi Omachi; Yosuke Goto; Yoichi Kamihara; Masanori Matoba; Takafumi Hiroi; Joe Kajitani; Osuke Miura

doi:10.1063/1.4900953

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS_2-xSe_x

Yoshikazu Mizuguchi, Atsushi Omachi, Yosuke Goto, Yoichi Kamihara, Masanori Matoba, Takafumi Hiroi, Joe Kajitani, Osuke Miura

物理情報工学科

研究成果: Article › 査読

41 被引用数 (Scopus)

抄録

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS_2-_xSe_x. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS_2-_xSe_x. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK² at around 470 °C for LaOBiS_1.2Se_0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS_1.2Se_0.8.

本文言語	English
論文番号	163915
ジャーナル	Journal of Applied Physics
巻	116
号	16
DOI	https://doi.org/10.1063/1.4900953
出版ステータス	Published - 2014 10月 28

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.4900953

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引用スタイル

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abstract = "We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 μW/cmK2 at around 470 °C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 °C in LaOBiS1.2Se0.8.",

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AU - Kamihara, Yoichi

AU - Matoba, Masanori

AU - Hiroi, Takafumi

AU - Kajitani, Joe

AU - Miura, Osuke

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