Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si 2H6

T. Motooka, H. Abe, P. Fons, T. Tokuyama

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Epitaxial growth processes of Si from ArF laser-excited Si 2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670°C regardless of the laser excitation. However, it was found that island growth was predominant at T s=550°C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6.

本文言語English
ページ(範囲)3473-3475
ページ数3
ジャーナルApplied Physics Letters
63
25
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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