Epitaxial phase change materials: Growth and switching of Ge 2Sb2Te5 on GaSb(001)

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.

本文言語English
ホスト出版物のタイトルMaterials and Physics for Nonvolatile Memories
出版社Materials Research Society
ページ177-183
ページ数7
ISBN(印刷版)9781605111339
DOI
出版ステータスPublished - 2009 1 1
外部発表はい
イベント2009 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2009 4 142009 4 17

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1160
ISSN(印刷版)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1409/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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