Epitaxy of Ge-Sb-Te phase-change memory alloys

Wolfgang Braun; Roman Shayduk; Timur Flissikowski; Manfred Ramsteiner; Holger T. Grahn; Henning Riechert; Paul Fons; Alex Kolobov

doi:10.1063/1.3072615

Epitaxy of Ge-Sb-Te phase-change memory alloys

Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Manfred Ramsteiner, Holger T. Grahn, Henning Riechert, Paul Fons, Alex Kolobov

研究成果: Article › 査読

34 被引用数 (Scopus)

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The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge ₂ Sb₂ Te₅ composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

本文言語	English
論文番号	041902
ジャーナル	Applied Physics Letters
巻	94
号	4
DOI	https://doi.org/10.1063/1.3072615
出版ステータス	Published - 2009
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3072615

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title = "Epitaxy of Ge-Sb-Te phase-change memory alloys",

abstract = "The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.",

author = "Wolfgang Braun and Roman Shayduk and Timur Flissikowski and Manfred Ramsteiner and Grahn, {Holger T.} and Henning Riechert and Paul Fons and Alex Kolobov",

note = "Funding Information: The authors would like to acknowledge the support of Steffen Behnke, Claudia Herrmann, and Anne-Kathrin Bluhm. Support for this work was provided by the Deutsche Forschungsgemeinschaft (BR 1723/3–1) and the Japan Science and Technology Agency through an international research corporation grant.",

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doi = "10.1063/1.3072615",

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journal = "Applied Physics Letters",

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AU - Braun, Wolfgang

AU - Shayduk, Roman

AU - Flissikowski, Timur

AU - Ramsteiner, Manfred

AU - Grahn, Holger T.

AU - Riechert, Henning

AU - Fons, Paul

AU - Kolobov, Alex

N1 - Funding Information: The authors would like to acknowledge the support of Steffen Behnke, Claudia Herrmann, and Anne-Kathrin Bluhm. Support for this work was provided by the Deutsche Forschungsgemeinschaft (BR 1723/3–1) and the Japan Science and Technology Agency through an international research corporation grant.

PY - 2009

Y1 - 2009

N2 - The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

AB - The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge 2 Sb2 Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

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Epitaxy of Ge-Sb-Te phase-change memory alloys

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