Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

本文言語English
論文番号222103
ジャーナルApplied Physics Letters
93
22
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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