@article{d5e62dc2b1e845c594615ac943871534,
title = "Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor",
abstract = "Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.",
author = "Satoru Miyamoto and Katsuhiko Nishiguchi and Yukinori Ono and Itoh, {Kohei M.} and Akira Fujiwara",
note = "Funding Information: Different aspects of this work were supported by the Grant-in-Aid for Scientific Research (Grant Nos. 20241036, 19310093, and 18001002), Grant-in-Aid for the Global Center of Excellence for High-Level Global Cooperation for Leading-Edge Platform on Access Spaces from MEXT, and Special Coordination Funds for Promoting Science and Technology.",
year = "2008",
doi = "10.1063/1.3028649",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",
}