Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures

S. Kamiya, C. Chen, N. Shishido, Masaki Omiya, K. Koiwa, H. Sato, M. Nishida, T. Suzuki, T. Nakamura, T. Nokuo, T. Suzuki

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Local apparent strength of interface between copper and cap layer on top was diverse depending on the crystal orientation underneath. For a comprehension of this diversity, physical adhesion energy to separate the interface was evaluated. It essentially does not include mechanical energy dissipating in plastic deformation in the process of crack extension. Sub-micron scale torsion test for elastic-plastic deformation properties and fracture tests on a number of different crystal orientations revealed that difference in adhesion energy is much smaller than difference in plastic dissipation energy. It is highly likely that small difference in the former is intensified through the latter, leading to a huge scatter in strength of LSI interconnect structures.

元の言語English
ホスト出版物のタイトル2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ページ151-153
ページ数3
ISBN(電子版)9781467373562
DOI
出版物ステータスPublished - 2015 11 10
イベントIEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 - Grenoble, France
継続期間: 2015 5 182015 5 21

Other

OtherIEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
France
Grenoble
期間15/5/1815/5/21

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Kamiya, S., Chen, C., Shishido, N., Omiya, M., Koiwa, K., Sato, H., Nishida, M., Suzuki, T., Nakamura, T., Nokuo, T., & Suzuki, T. (2015). Evaluation of adhesion energy and its correlation to apparent strength for Cu/SiN interface in copper damascene interconnect structures. : 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 (pp. 151-153). [7325649] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-MAM.2015.7325649