Evidence for pair generation of an e center and a nonbridging oxygen-hole center in -ray-irradiated fluorine-doped low-OH synthetic silica glasses

Kazuo Arai, Hiroaki Imai, Junichi Isoya, Hideo Hosono, Yoshihiro Abe, Hiroshi Imagawa

研究成果: Article査読

44 被引用数 (Scopus)

抄録

We have examined effects of fluorine concentration on defect formation by -ray irradiation in low-OH synthetic silica glasses over the F concentration range 03 wt. %. Doping with 1 wt. % of fluorine eliminates effectively Si-Cl without causing formation of Si-Si and Si-H (all such structural units may be precursors of the E center); and Si-F does not behave as the precursors of the E center. At this doping level, the concentration of the E center is minimized, and the concentration coincides with that of the nonbridging oxygen-hole center (NBOHC). We conclude that pair generation of the E center and NBOHC from intrinsic Si-O-Si bonds is observed in the samples in which the precursor defects are suppressed by proper F doping.

本文言語English
ページ(範囲)10818-10821
ページ数4
ジャーナルPhysical Review B
45
18
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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